| PART |
Description |
Maker |
| UPD444001 UPD444001LE-11 UPD444001LE-10 UPD444001L |
4M X 1 STANDARD SRAM, 11 ns, PDSO32
4M-BIT CMOS FAST SRAM 4M-WORD BY 1-BIT 4分位CMOS SRAM的快速分1
|
NEC Corp.
NEC, Corp.
|
| UPD444016G5-12Y-7JF UPD444016G5-10Y-7JF UPD444016G |
CONNECTOR ACCESSORY
4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
|
NEC Corp.
NEC[NEC]
|
| M5M5W817KT-70HI |
Memory>Low Power SRAM
8388608-BIT (524288-WORD BY 16-BIT / 10485776-WORD BY 8-BIT) CMOS STATIC RAM
|
Renesas Electronics Corporation
|
| M6MGD137W34DWG |
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM
|
Renesas Electronics Corporation
|
| UPD444016LLE-A10 UPD444016LLE-A12 UPD444016LLE-A8 |
4M-bit(256K-word x 16-bit) Fast SRAM
|
NEC
|
| UPD4416004G5-A17-9JF UPD4416004G5-A15-9JF |
16M-bit(4M-word x 4-bit) Fast SRAM
|
NEC
|
| UPD444016G5-12-7JF UPD444016LE-10 UPD444016LE-12 U |
4M-bit(256K-word x 16-bit) Fast SRAM
|
NEC
|
| M5M5V408BFP M5M5V408BTP-85LW M5M5V408BKR-70HI |
512K X 8 STANDARD SRAM, 85 ns, PDSO32
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation
|
| M5M5V216ART-70HI M5M5V216ART-55HI M5M5V216ATP M5M5 |
Memory>Low Power SRAM
2097152-BIT (131072-WORD BY 16-BIT) CMOS STATIC RAM
|
Renesas Electronics Corporation
|
| UPD444004LE-10 UPD444004LE-12 UPD444004LE-8 |
4M-bit(1M-word x 4-bit) Fast SRAM
|
NEC
|
